Semiconductor devices

ABSTRACT

A semiconductor device consists of a voltage-sustaining layer between a conductive contact layer and a conductive device feature layer, wherein said voltage-sustaining layer consists of at least one semiconductor region and at least one dielectric region with high permittivity, both said semiconductor regions and dielectric regions contact with the interface formed by said device feature layer and contact layer, said semiconductor regions contact with said dielectric regions each to other, and the contact surface formed thereof is perpendicular to or approximately perpendicular to said contact layer and device feature layer.

FIELD OF INVENTION

This invention relates to semiconductor devices, in particular to the voltage-sustaining layer of semiconductor power devices.

BACKGROUND OF THE INVENTION

It is well-known that in a conventional power device, the reverse voltage applied between an n⁺-region and a p⁺-region is sustained by a thick lightly-doped semiconductor layer. Such a layer is called hereafter voltage-sustaining layer (VSL). As for a high-voltage power device, the specific on-resistance R_(on) (or the on-voltage) is also mainly determined by the voltage-sustaining layer. The lighter the doping of this layer is, and/or the thicker of this layer is, the higher the breakdown voltage is, nevertheless the higher the on-resistance (or on-voltage) is. In many power devices, one of the most important problems is to obtain both high breakdown voltage and low on-resistance. The relation therebetween become an obstruction to make high performance power devices. Moreover, the above-mentioned R_(on) refers to the resistance per unit area of the conduction region in the voltage-sustaining layer, whereas actually, there are always some non-conduction regions in the voltage-sustaining layer. For instance, the region under the source-substrate region of a vertical-type (longitudinal-type) MOSFET and the region under the contact layer in the base region of a bipolar transistor are both non-conduction regions.

The above problem was solved in the inventor's Chinese patent (No. ZL91101845.X) and U.S. patent (U.S. Pat. No. 5,216,275). The solution thereof is to utilize a composite buffer layer (CB-layer) between a p⁺-region and an n⁺-region to sustain voltage. The CB-layer contains two kinds of regions with opposite conduction type. These two kinds of regions are alternately arranged, as viewed from any cross-section parallel to the interface between the CB-layer and the n⁺ (or p⁺) region, whereas the previous VSL is always a semiconductor of single conduction type. The said invention also discloses the MOST composed by the VSL. The on-resistance per unit area R_(on) is proportional to V_(B) ^(1.3), wherein V_(B) represents the breakdown voltage. This represents a breakthrough to the conventional relation of VSL; meanwhile the other electrical performances of the MOST remain almost same.

Within the past few years, a significant change has taken place in the semiconductor power device industry. Through the use of structure of Super-Junction devices (i.e., structure of CB layer), MOSTs have been capable of providing high voltage and high current.

FIG. 1(a) and 1(b) illustrate a method of manufacturing a Super-Junction power device 1. The process begins with a semiconductor piece of a substrate 2 growing a first epitaxial layer 3. In the figures, the substrate 2 is a heavily doped n⁺ layer and the first epitaxial layer 3 is a lightly doped n layer. Ion implantation is performed to make a layer of p-type region 4 on layer 3. In general, an epitaxial layer is required for each 50 to 100 volts of sustaining voltage. Accordingly, as for a 600 volts transistor, it is required to sequentially deposit respective n-type epitaxial layers indicated by 5, 7, 9, 11 and 13 in FIG. 1(a). After each epitaxial layer is completed, it is required to make respective p-type icon implantation layer indicated by 4, 6, 8, 10, 12 and 14 in FIG. 1(a).

After the diffusion of p-type ion implantation layer 4, 6, 8, 10, 12 and 14, the p-region 16 is formed, and the region without influence of ion implantation is n-region, 15 shown in FIG. 1(b). Thus the p-region and n-region with an arrangement are formed. The device layer, which is called device feature layer, 17, is then performed. The device feature layer 17 includes n⁺ source region 18 formed by ion implantation, oxidation layer 19, and metal gate or polysilicon gate 20 thereon. There is a p⁺ region 21 between the two n⁺ source regions 18, below which there is a deep junction p⁺ region 22. The deep junction p⁺ region 22 connects to the p⁺ region 21.

Obviously, the above-mentioned manufacture method uses many times of epitaxy and it is very costly. Moreover, the CB-layer structure uses the principle of charge compensation, wherein the dose of dopants of p-regions and n-regions must be controlled precisely and this leads to increase of difficulty in manufacturing and increase of the cost of devices.

Another deficiency of the MOST with CB-layer structure is that, when the conduction current is very large, the electric charge of the carriers themselves affects the balance of the electric charge, which leads to the decrease of breakdown voltage with the increasing of the current, i.e., secondary breakdown phenomena. The safe-operating area (SOA) is therefore not very ideal.

Still another deficiency of the MOST with CB-layer structure is introduced by the two voltages existing between p-region and n-region, one of which is the built-in voltage, and the other is additional voltage produced by the on-resistance in a region when a current flows in the region. A depletion region existed between the two regions is caused by the two voltages, so that the area of effective section of the conduction region decreases. In other words, the on-resistance increases with the increasing of the current.

SUMMARY OF THE INVENTION

The purpose of this invention is to provide a semiconductor device comprising a new structure of voltage-sustaining layer (VSL), which is a compound voltage-sustaining layer consisting semiconductor and high permittivity dielectric (High K), called as High K and Semiconductor VSL or HKS-Layer. It can avoid the above-mentioned deficiencies and improve the relationship between the on-resistance R_(on) and the breakdown voltage V_(B), while maintaining high switching speed.

This invention provides a semiconductor device, which includes a VSL between a conductive contact layer and a conductive device feature layer. Said VSL consists of at least one semiconductor region and at least one high permittivity dielectric region. Both said semiconductor regions and said dielectric regions contact with the interface formed by said device feature layer and contact layer. Said semiconductor regions contact with said dielectric regions each to other, and the contact surface formed thereof is perpendicular to or approximately perpendicular to said contact layer and device feature layer.

Both said semiconductor regions and said dielectric regions contact with the interface formed by said device feature layer and contact layer, wherein the contact may be direct contact, or indirect contact via a thin semiconductor region or a thin dielectric region.

Said semiconductor regions contact with said dielectric regions each to other, wherein the contact may be direct contact, or indirect contact via a thin and low permittivity dielectric region.

At least one said semiconductor region and at least one said dielectric region form a cell. Said VSL is formed by arranging compactly a plurality of said cells.

Said semiconductor region may be formed of a semiconductor of a first conductivity type, said device feature layer is a heavily doped semiconductor of a second conductivity type, and said contact layer is a heavily doped semiconductor of a first conductivity type.

Further, said semiconductor region may be formed of a semiconductor of a first conductivity type, said contact layer may be formed of a thin semiconductor of a first conductivity type above a heavily doped semiconductor of a first conductivity type, and said thin semiconductor of a first conductivity type contacts directly with the VSL.

Said semiconductor region may contain both a semiconductor portion of a first conductivity type and a semiconductor portion of a second conductivity type, wherein both the semiconductor of the first conductivity type and the semiconductor of the second conductivity type contact directly with the device feature layer and the contact layer, wherein the device feature layer is heavily doped semiconductor region of a second conductivity type.

Said semiconductor region may contain both a semiconductor portion of a first conductivity type and a semiconductor portion of a second conductivity type, wherein the semiconductor of the first conductivity type contacts directly with both the device feature layer and the contact layer, the semiconductor of a second conductivity type contacts directly with the device feature layer and indirectly with the contact layer via a thin high permittivity dielectric layer or a thin low permittivity dielectric layer, wherein the device feature layer is heavily doped semiconductor region of a second conductivity type.

Said semiconductors of the two conductivity type may have a high permittivity dielectric region therebetween.

Said contact layer may be heavily doped semiconductor of a second conductivity type.

Said contact layer may have a thin semiconductor layer of a first conductivity type above a heavily doped semiconductor layer of a second conductivity type, wherein said thin semiconductor layer of the first conductivity type contacts directly with the VSL.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1(a) is a schematic diagram illustrating a method of manufacturing COOLMOST in prior art, wherein many times of epitaxy and ion implantation are shown.

FIG. 1(b) is a schematic diagram illustrating a method of manufacturing COOLMOST in prior art, wherein a p-region surrounded with n-regions is formed after diffusion.

FIG. 2(a) illustrates the voltage-sustaining layer (within the distance of W) of a pin diode.

FIG. 2(b) illustrates the voltage-sustaining layer (within the distance of W) of a p⁺n⁻n⁺ diode.

FIG. 2(c) illustrates the voltage-sustaining layer (within the distance of W) of an n-RMOST.

FIG. 2(d) illustrates the voltage-sustaining layer (within the distance of W) of an n-VDMOST.

FIG. 2(e) illustrates the voltage-sustaining layer (within the distance of W) of a Schottky diode.

FIG. 2(f) illustrates the voltage-sustaining layer (within the distance of W) of an IGBT close to punch-through condition.

FIG. 3(a) illustrates a schematic structure of a conventional RMOST and its electric field distribution.

FIG. 3(b) illustrates a conventional RMOST and its electric field distribution, wherein the electric field distribution when the bias voltage is close to the breakdown voltage is shown.

FIG. 3(c) illustrates a conventional RMOST and its electric field distribution, wherein a constant component of the electric field is shown.

FIG. 3(d) illustrates a conventional RMOST and its electric field distribution, wherein a component varying with the distance of the electric field is shown.

FIG. 4(a) illustrates a schematic structure of CB-RMOST and its electric field distribution.

FIG. 4(b) illustrates a CB-RMOST and its electric field distribution, wherein the electric field distribution when the bias voltage is close to the breakdown voltage is shown.

FIG. 4(c) illustrates a CB-RMOST and its electric field distribution, wherein a constant component of the electric field is shown.

FIG. 4(d) illustrates a CB-RMOST and its electric field distribution, wherein a component varying with the distance of the electric field is shown.

FIG. 5(a) is a schematic diagram of voltage-sustaining layer composed of an n-type semiconductor and high permittivity material (HKS voltage-sustaining layer).

FIG. 5(b) is a schematic diagram of voltage-sustaining layer composed of a p-type semiconductor and high permittivity material (HKS voltage-sustaining layer).

FIG. 5(c) is a schematic diagram of voltage-sustaining layer composed of an n-type semiconductor region and a p-type semiconductor region as well as a high permittivity material region (HKS voltage-sustaining layer).

FIG. 5(d) is a schematic diagram of voltage-sustaining layer composed of an n n-type semiconductor region and a p-type semiconductor region as well as a high permittivity material region (HKS voltage-sustaining layer), wherein one side of the high permittivity material contacts with p-type semiconductor region, and the other side contacts with n-type semiconductor region.

FIG. 6(a) is a schematic top-view at the cross-section II-II′ of intedigitated pattern of the HKS voltage-sustaining layer shown in FIG. 5.

FIG. 6(b) is a schematic top-view at the cross-section II-II′ of square cell of the HKS shown in FIG. 5, where S regions are all mutually connected.

FIG. 6(c) is a schematic top-view at the cross-section II-II′ of square cell of the HKS shown in FIG. 5, wherein HK regions are all mutually connected.

FIG. 6(d) is a schematic top-view at the cross-section II-II′ of rectangular cell of the HKS shown in FIG. 5, wherein S regions are all mutually connected.

FIG. 6(e) is a schematic top-view at the cross-section II-II′ of rectangular cell of the HKS shown in FIG. 5, wherein HK regions are mutually connected.

FIG. 6(f) is a schematic top-view at the cross-section II-II′ of mosaic square pattern of the HKS shown in FIG. 5.

FIG. 6(g) is a schematic top-view at the cross-section II-II′ of hexagonal close-packed pattern of the HKS shown in FIG. 5, where S regions are all mutually connected.

FIG. 6(h) is a schematic top-view at the cross-section II-II′ of hexagonal close-packed pattern of the HKS shown in FIG. 5, where HK regions are all mutually connected.

FIG. 7(a) is a schematic diagram of n-RMOS using interdigitated HKS voltage-sustaining layer.

FIG. 7(b) is a schematic diagram of switch-on characteristic of n-RMOS using interdigitated HKS voltage-sustaining layer.

FIG. 7(c) is a schematic diagram of switch-off characteristic of n-RMOS using interdigitated HKS voltage-sustaining layer.

FIG. 8(a) is a schematic top-view at the cross-sectionIII-III′ of interdigitated pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d)

FIG. 8(b) is a schematic top-view at the cross-sectionIII-III′ of square cell pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d), where n-regions are all mutually connected.

FIG. 8(c) is a schematic top-view at the cross-sectionIII-III′ of square cell pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d), where p-regions are all mutually connected.

FIG. 8(d) is a schematic top-view at the cross-sectionIII-III′ of rectangular cell pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d), where the n-regions are all mutually connected.

FIG. 8(e) is a schematic top-view at the cross-sectionIII-III′ of rectangular cell pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d), where all the p-regions are mutually connected.

FIG. 8(f) is a schematic top-view at the cross-sectionIII-III′ of mosaic square pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d).

FIG. 8(g) is a schematic top-view at the cross-sectionIII-III′ of another mosaic square pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d).

FIG. 8(h) is a schematic top-view at the cross-sectionIII-III′ of a hexagonal close-packed pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d), where all the n-regions are mutually connected.

FIG. 8(i) is a schematic top-view at the cross-sectionIII-III′ of a hexagonal close-packed pattern of HKS voltage-sustaining layer containing p-regions and n-regions shown in FIG. 5(d), where all p-regions are connected.

FIG. 9 is a schematic structure of HKS voltage-sustaining layer, wherein a thin and low permittivity silicon dioxide layer is disposed between high permittivity material and semiconductor material.

FIG. 10(a) illustrates the process of manufacturing a VDMOST using HKS voltage-sustaining layer structure, wherein a groove having a depth close to thickness of epitaxial layer is formed by etching in the silicon wafer having n-type epitaxial layers on n⁺ substrate.

FIG. 10(b) illustrates the process of manufacturing a VDMOST using HKS voltage-sustaining layer structure, wherein the groove is filled with high permittivity dielectric (HK) material.

FIG. 10(c) illustrates the process of manufacturing a VDMOST using HKS voltage-sustaining layer structure, wherein active region of the device is made on the surface of the n-type region.

FIG. 11 is a schematic diagram of n-VDMOST which is form in such a manner that a high permittivity material comes into contact with an n⁺ drain region via a lightly doped n-region.

FIG. 12 is a schematic diagram of n-VDMOST formed by use of the HKS voltage-sustaining layer as shown in FIG. 5(d).

FIG. 13 is a schematic diagram of n-VDMOST formed by use of the HKS voltage-sustaining layer as shown in FIG. 5(d), wherein the p-region is not in direct contact with the n⁺ drain region.

FIG. 14 is a schematic diagram of IGBT formed by use of the HKS voltage-sustaining layer as shown in FIG. 5(d).

FIG. 15 is a schematic diagram of IGBT formed by use of the HKS voltage-sustaining layer as shown in FIG. 5(d), wherein the IGBT is formed with a buffer layer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In a semiconductor power device, there normally is a voltage-sustaining layer between a p⁺-region (or a region equivalent to p⁺-region) and an n⁺-region (or a region equivalent to n⁺-region). FIG. 2(a) is a schematic diagram of a pin diode, which is formed by a p⁺-region 24, n⁺-region 25 and i-region 23, wherein i-region 23 is the voltage-sustaining layer. Here, A represents anode and K represents cathode of the diode. FIG. 2(b) is a schematic diagram of a p⁺n⁻n⁺ diode, wherein if the thickness of the depletion layer is W when the applied reverse bias voltage is close to the breakdown voltage, the region which has the thickness of W is the voltage-sustaining layer. FIG. 2(c) schematically shows an electron conduction n-RMOST. Here, S is the source electrode, G is the gate electrode and D is the drain electrode. Although the region where gate oxide layer 32 locates above the plane 31 is not a p⁺-region, yet in actual use the potential above plane 31 and below the gate oxide layer 32 has no significant difference with the potential in the interface between the p⁺ source-substrate region 29 and the n-region 27, and the difference thereof is much smaller than the breakdown voltage V_(B) of the device. Therefore, plane 31 can be approximately considered as an equal potential plane. In the following discussion on sustaining of voltage, the area above plane 31 is called as device feature layer 33. The effect of device feature layer 33 on electric field distribution can be considered as that of a p⁺-layer. FIG. 2(d) schematically shows a VDMOST. Here, the potential in the plane 31 can approximately be treated as equal to that in the p⁺ source-substrate region 29. Thus, in this invention, the area from plane 31 to the interface of the n-region 27 and the n⁺-drain region 28 is considered as the voltage-sustaining layer 34, while the area above the plane 31 is considered as device feature layer 33. Here, it is assumed that in the above two MOST, the edges of depletion region have already reached the interface between the n-region 27 and the n⁺-drain region 28 when the applied reverse bias voltage is lower than the breakdown voltage. Therefore the thickness of the voltage-sustaining layer is W as shown in the figures. This assumption is in accordance with actual situation as usual.

In above cases, the two sides of the voltage-sustaining are p⁺ semiconductor region and n⁺ (or n) semiconductor region, respectively. Actually, the device feature layer may be a metal instead of a p⁺ semiconductor region. The metal and n-region of the voltage-sustaining layer forms a Schottky contact. FIG. 2(e) schematically shows such a Schottky diode, wherein metal layer 35 substitutes the p⁺-layer in above cases. Similarly, underside of the voltage-sustaining layer may not contact with n⁺ (or n) region, but with metal, such that a Schottky contact is formed. Therefore, the region contacted in underside of the voltage-sustaining layer is called as contact layer. FIG. 2(f) shows a case of an IGBT close to punch-through condition. The region contacted in underside of the voltage-sustaining layer may be taken as p⁺-layer 36.

In order to describe the principle of this invention, the reason why the relation between breakdown voltage V_(B) and on-resistance R_(on) in conventional power MOS device is not ideal will now be briefly described. FIG. 3(a) schematically shows an RMOST. It is formed by n-region 27, n⁺ source region 30, p⁺ source-substrate region 29 and n⁺ drain region 28. Here G represents the gate electrode, S represents the source electrode and D represents the drain electrode. The voltage-sustaining layer thereof is the depletion region 34 which has the thickness of W as shown in the figure. FIG. 3(b) shows the electric field distribution when the bias voltage is close to the breakdown voltage in RMOST, wherein E represents the electric field along Y-axis. According to Poisson's equation, the gradient of the electric field is qN_(D)/ε_(s), wherein N_(D) represents the donor concentration of the n-region. Avalanche breakdown occurs at the case that maximum electric field reaches to the critical field for breakdown (E_(crit)). The value of E_(crit) is about 3·10⁵ V/cm. The shaded area between the E-line and the y-axis represents the integral of the electric field along the path, which is the breakdown voltage V_(B). Obviously, for obtaining a high value of V_(B), the following two conditions must be satisfied: (1) the gradient of the electric field is small, i.e., N_(D) is small; (2) the width of the depletion region (W) is large. However, small value of N_(D) means the concentration of carriers is small and the resistivity is high in the case of the turn-on. Large W means the conduction path is long. Since on-resistance is directly proportional to resistivity and path length, it will cause the on-resistance greatly increased. As for a power MOST, the optimum design is to make the electric field at the boundary of the n-region 27 and the n⁺-drain region 28 be E_(crit)/3. In this case, the breakdown voltage will be 2E_(crit)·W/3.

The above electric field distribution can be considered as a superposition of two electric fields, wherein one is a electric field caused by applying external voltage V_(B) to a pin diode, as shown in FIG. 3(c), and the value of the electric field is 2E_(crit)/3 which does not vary with the distance; the other is a electric field linearly varying from a value of −E_(crit)/3 at the bottom to a value of +E_(crit)/3 at the top, as shown in FIG. 3(d), and its gradient is qN_(D)/ε_(s) which has two peak values of −qN_(D)W/2ε_(s) and +qN_(D)W/2ε_(s). The reason that the on-resistance R_(on) increases with increasing of the breakdown voltage V_(B) is due to the existing of the latter electric field.

The CB voltage-sustaining layer structure (Chinese patent for invention: ZL91101845.X and U.S. patent for invention: U.S. Pat. No. 5,216,275) proposed by the inventor of this application has solved the above problem. Why the CB structure can improve the relationship between the on-resistance R_(on) and the breakdown voltage V_(B) will be briefly described as follows. FIG. 4(a) schematically shows a CB-RMOS. Its voltage-sustaining layer 34 is formed of alternate arrangement of n-region 27 and p-region 37, and the thickness thereof is W. When a reverse bias voltage is applied on the CB-RMOST such that n-regions 27 and p-regions 37 are fully depleted, the electric fluxes generated by the positive charges of the ionized donors in n-region 27 are terminated on the negative charges of the ionized acceptors in the neighboring p-region 37. Therefore, the electric field along the line I-I′ in the n-region 27 is shown as the solid curve in FIG. 4(b). It's almost unchanged, except a little variation near the plane 31 and near the n⁺-drain region 28. This electric field can also be decomposed into two components as shown in FIG. 4(c) and FIG. 4(d). The electric field shown in FIG. 4(c) corresponds to the case of a pin diode, which is similar to that in FIG. 3(c). FIG. 4(d) represents a vertical electric field generated by n-region 27. This electric field is much smaller than that in FIG. 3(d) under the condition of the same doping concentration. In fact, N_(D) in the CB-structure can be very large, while the electric field generated by the charge of doping N_(D) will still be very small. This is because, the vertical electric field generated by the positive charges of ionized donor is not continuously accumulated from the middle of the voltage-sustaining layer, the electric fluxes generated by the ionized donors are mostly terminated by the ionized acceptors in the surrounding p-region 37. Only those ionized donor and acceptors close to the top and the bottom are terminated by the negative charges on the upper gate electrode G and by the negative charges on the lower n⁺-drain region 28, respectively.

This invention proposes a voltage-sustaining layer structure that constructed by alternating arranged high permittivity dielectric material and semiconductor, as shown in FIG. 5, wherein HK represents high permittivity dielectric material.

The principle of this invention is as follows.

In FIG. 5(a), suppose that both HK region 38 and n-region 27 are very narrow, then it is equivalent to a combined material with permittivity much larger than ε_(s) and smaller than ε_(D), where ε_(S) and ε_(D) are the permittivities of semiconductor and the HK material respectively. Roughly speaking, if the permittivity after combination is ε_(M), then ε_(M)>>ε_(S) when ε_(D)>>ε_(S). This causes such slope qN_(D)/ε_(S) as shown in FIG. 3(d) to be qN_(D)/ε_(M), which is very small under the condition of same doping concentration. In other words, one can obtain the same peak value of the electric field, E_(crit)/3, by using a larger value of N_(D).

When the HKS layer of this invention is used as voltage-sustaining layer, then the electric fluxes generated by the ionized donors of the depleted n-region 27 will transversely flow to the neighboring high permittivity dielectric 38, and eventually be absorbed by negative charges induced in the p⁺-region 24 when they finally flow to the top through inside of high permittivity dielectric 38. Therefore, the maximum of the electric field generated by the ionized donors of n-region 27 is much smaller than qN_(D·)W/2ε_(S). And, in the high permittivity dielectric 38, the electric fluxes entering from n-region 27 is equivalent to make it generate a plurality of ionized donors. However, due to that ε_(D) is very large, these electric fluxes generate only a small electric field by themselves.

FIG. 5(b) is similar to FIG. 5(a). In FIG. 5(b), the semiconductor region in the voltage-sustaining layer is p-type region 37. Here, the fluxes generated from the positive charges of ionized donors of n⁺-region 25 enter the high permittivity region 38, flow upwards and then laterally enter into the p-region 37, eventually terminated by the negative charges of the ionized acceptors of the p-region 37. Therefore, the maximum field induced by the p-region 37 is much smaller than that of the case without a high permittivity region.

FIG. 5(c) and FIG. 5(d) show that high permittivity (HK) material is introduced into the CB-structure of the Chinese patent for invention (ZL 91101845 .X) and U.S. patent for invention (U.S. Pat. No. 5,216,275) invented by this inventor.

In FIG. 5(c), when both p-regions 37 and n-regions 27 are fully depleted, then, in the ideal situation, the electric fluxes generated by the positive charges of the ionized donors of n-region 27 are fitly all terminated by the ionized acceptors of p-region 37. In the not ideal situation where the n-region 27 is too heavily doped, the redundant electric fluxes may enter inside of high permittivity dielectric 38, then flow to the top p⁺-region 24 and terminate on negative charges induced in p⁺-region 24. In the not deal situation where the n-region 27 is too lightly doped, there are electric fluxes generated from the bottom n⁺ region 25, and the electric fluxes flow to p-region 37 through the inside of the high permittivity dielectric, then terminate on the redundant negative charges of the ionized acceptors.

In FIG. 5(d), when both n-region 27 and p-region 27 are fully depleted, in the ideal situation, the electric fluxes generated by the positive charges of the ionized donors of n-region 27 flow to p-region 37 through high permittivity dielectric, and are terminated by the ionized acceptors thereof. In the not ideal situation that the n-region 27 is too heavily doped, the redundant electric fluxes may flow to the top p⁺-region 24 through high permittivity dielectric 38, then terminate on negative charges induced in p⁺-region 24. Furthermore, in the not ideal situation that the n-region 27 is too lightly doped, there are electric fluxes generated from the bottom n⁺ region 25, and the electric fluxes flow to p-region 37 through the inside of the high permittivity dielectric 38, then terminate on the redundant negative charges of the ionized acceptors.

From above, it can be seen that in this invention, the semiconductor region of the voltage-sustaining layer may be n-type region or p-type region, or having both regions. Therefore, unless it is specially indicated, the semiconductor region is uniformly represented by S in the following description.

In HKS layer, there are many structure patterns for the arrangement of the high permittivity material and the semiconductor region. FIG. 6 shows some arrangements for high permittivity material and semiconductor region as viewed along II-II′ cross-section in FIG. 5(a). Many cells are divided by dashed lines in the figure. These patterns include interdigitated pattern as shown in FIG. 6(a); a pattern formed by square cells, wherein S regions are all mutually connected as shown in FIG. 6(b); a pattern formed by square cells, wherein HK regions are all mutually connected as shown in FIG. 6(c); a pattern formed by rectangular cells, wherein S regions are all mutually connected as shown in FIG. 6(d); a pattern formed by rectangular cells, wherein HK regions are all mutually connected as shown in FIG. 6(e); a mosaic square pattern as shown in FIG. 6(f); a hexagonal close-packed pattern, wherein S regions are all mutually connected as shown in FIG. 6(g); a hexagonal close-packed pattern, wherein HK regions are all mutually connected as shown in FIG. 6(h).

FIG. 7 is a schematic diagram of RMOST structure using HKS layer. The advantages thereof can be illustrated by an example of typical numerical calculation. It is assumed that interdigitated pattern is used, the width of each cell is 13.04 μm, the n region 27 and the HK region 38 each has the half width, and the width of HKS layer is 65 μm. The donor concentration of the n-region is 2.07·10¹⁵ cm⁻³. The relative permittivity of the high permittivity material is 234 (20 times higher than that of silicon). A numerical simulation is performed by using the software MEDICI/TMA, wherein standard models are adopted. The resulted breakdown voltage is 750V and the on-resistance is 30 mΩ·cm². Whereas, the on-resistance of a conventional RMOST with the same breakdown voltage is 123 mΩ·cm². FIG. 7(b) and FIG. 7(c) show the turn-on and turn-off transient current characteristics respectively, wherein the power supply is 750V and the serial resistance is 5.75·10⁷Ω·μm. The gate voltage is turned on and off from 0V to 20V and from 20V to 0V respectively, with an equal ramp-time of 1 nanosecond. It can be seen that the turn-on time is less than 2 ns and the turn-off time is less than 80 ns.

Obviously, herein, there is no problem of decrease of the breakdown voltage in the case of large current of COOLMOST. On the contrary, the density of space charge in n-region will be decreased with the increasing of the electron number such that the breakdown voltage will be increased. This makes such device have a larger safe-operating area, e.g., the breakdown voltage maintains unchanged even when the current reaches to a value of 100 A/cm².

Another advantage is that there is no problem of depletion of n-region 27 caused by a built-in voltage or an additional voltage during current passing through in p-region and/or n-region, which occurs in the case of a MOST using CB structure. Therefore, the on-resistance will not increase with the increasing of the drain-source voltage. Only when the voltage is large, it will introduce saturation of electron velocity in n-region (also called as drift region) and increase of the resistance.

FIG. 8 schematically shows some structures of arrangement of high permittivity material and n-type semiconductor region as well as p-type semiconductor region as viewed alongIII-III′ section in FIG. 5(d). These patterns include an interdigitated pattern as shown in FIG. 8(a); a pattern formed by square cells, wherein the n-regions are all mutually connected as shown in FIG. 8(b); a pattern formed by square cells, wherein the p-regions are all mutually connected as shown in FIG. 8(c); a pattern formed by rectangular cells, wherein the n-regions are all mutually connected as shown in FIG. 8(d); a pattern formed by rectangular cells, wherein the p-regions are all mutually connected as shown in FIG. 8(e); one of the mosaic square patterns as shown in FIG. 8(f); another one of the mosaic square patterns as shown in FIG. 8(g); a hexagonal close-packed pattern, wherein the n-regions are all mutually connected as shown in FIG. 8(h); a hexagonal close-packed pattern, wherein the p-regions are all mutually connected as shown in FIG. 8(i).

The above-mentioned high permittivity material is not limited to a single uniform material; it can even be composite material. For instance, in FIG. 6(a), if the semiconductor is silicon, it can be separated with a high permittivity material by a thin silicon dioxide layer 40, as shown in FIG. 9. The shaded region represents silicon dioxide layer 40. Although the permittivity of SiO₂ is very low, it will not prevent the electric fluxes of the semiconductor S from flowing to the high permittivity dielectric HK, or the electric fluxes of the high permittivity dielectric HK from flowing to the semiconductor S, as long as the silicon dioxide layer 40 is thin enough.

FIG. 10 shows one of the embodiments manufacturing a VDMOST using this invention. A silicon wafer having an n⁺-silicon substrate 41 and an n-type epitaxial layer 42 is grooved by means of anisotropic etching method, resulted in the situation shown in FIG. 10(a). The grooves have sidewalls and bottoms. Then, the grooves are filled with high permittivity material so as to be the situation shown in FIG. 10(b). Subsequently, p⁺ source-substrate region 29 and n⁺ source region 30 are formed by diffusion or ion-implantation in n-region 27. Thereafter, the metal electrodes are made, so that the VDMOST structure shown in FIG. 10(c) is obtained.

FIG. 11 shows another kind of n-VDMOST using this invention. It is characterized in that the high permittivity material do not directly contact to the n⁺ drain region 28, but contact to the n⁺-drain region 28 through an n-region 45. Due to the existence of this n-region 45, the resistance of the part close to n⁺ drain region 28 of the turn-on VDMOST is further diminished. Although when a reverse voltage is applied to drain electrode D and source electrode S, there is a little part of voltage across region 44 and region 45 in the figure, yet the voltage sustained by the device is dominantly across region 43. Therefore, n-region 45 together with n⁺ drain region 28 is considered as contact layer.

FIG. 12 is a schematic diagram showing one cell of a n-VDMOST, the voltage-sustaining layer thereof using the structure shown in FIG. 5(d) of this invention.

FIG. 13 is a schematic diagram showing one cell of another n-VDMOST similar to that shown in FIG. 12, which is formed by using this invention. The difference between this figure and FIG. 12 is that, p-region 37 does not contact directly to the lower n⁺ drain region 28, but indirectly contacts to it through a thin dielectric layer HK 38. Of course, the dielectric layer which contacts the p-region 37 and n⁺ drain region 28 can be not a high permittivity material, but be a thin and low permittivity material instead.

FIG. 14 illustrates an IGBT which is formed by using this invention. It is different from the VDMOST of FIG. 12 mainly in that the contact layer is a p⁺-region 36 instead of an n⁺-region.

FIG. 15 illustrates an IGBT having a buffer layer (region 46), which is formed by using this invention. It is different from FIG. 14 mainly in that, in the contact layer, besides the p⁺ substrate 36, there is an n⁺ buffer layer 46 thereon.

This invention has been illustrated by many examples stated above, wherein said n-type may be considered as a material of a first conductivity type, and p-type may be considered as a material of a second conductivity type. Obviously, according to the principle of this invention, the n-type and p-type of various embodiments can be exchanged each other, which will not influence the contents of this invention. As for a person skilled in the art, various changes and various devices can be made under the guidance of the idea of this invention.

The problem of that the breakdown voltage of COOLMOST decreases in large current does not exist in this invention. On the contrary, when the on-current is large, the charges of carriers themselves will not influence charge balance. When the number of electrons increases, the density of space charge in n-region will decrease, such that the breakdown voltage will increase. This causes that this invention has larger safe-operating region, e.g., the breakdown voltage maintains unchanged even when the current reaches to 100 A/cm².

In addition, the depletion problem in n-region, e.g., caused by built-in voltage of p-region and n-region or additional voltage when current flows through in the MOST using CB structure does not exist in this invention, either. Thereby the on-resistance will not increase with the increasing of drain-source voltage. Only when the voltage is large, it will introduce saturation of electron velocity in n-region (also called as drift region) and increase of the resistance. It improves the relationship between the on-resistance R_(on) and the breakdown voltage V_(B) while maintaining high switching speed. 

1. A semiconductor device comprising a voltage-sustaining layer between a conductive contact layer and a conductive device feature layer, characterized in that: said voltage-sustaining layer consists of at least one of the semiconductor regions and at least one of the high permittivity dielectric regions, both said semiconductor regions and dielectric regions contact with the interface formed by said device feature layer and contact layer, said semiconductor regions contact with said dielectric regions each other, and the contact surface formed thereof is perpendicular to or approximately perpendicular to said contact layer and device feature layer.
 2. The semiconductor device according to claim 1, characterized in that: both said semiconductor regions and dielectric regions contact with the interface formed by said device feature layer and contact layer, wherein this contact may be direct contact, or indirect contact through a thin semiconductor region or a thin dielectric region.
 3. The semiconductor device according to claim 1, characterized in that: said semiconductor regions contact with said dielectric regions each other, wherein this contact may be direct contact or indirect contact through a thin and low permittivity dielectric region.
 4. The semiconductor device according to claim 1, characterized in that: at least one of said semiconductor regions and at least one of said dielectric regions compose a cell, many of said cells are close packed so as to form said voltage-sustaining layer.
 5. The semiconductor device according to claim 1, characterized in that: said semiconductor regions are formed by a semiconductor of a first conductivity type, said device feature layer is formed by a heavily-doped semiconductor of a second conductivity type and said contact layer is formed by a heavily-doped semiconductor of a first conductivity type.
 6. The semiconductor device according to claim 1, characterized in that: said semiconductor regions are formed by a semiconductor of a first conductivity type, said contact layer is formed by a heavily-doped semiconductor of a first conductivity type with a thin semiconductor of a first conductivity type thereon, wherein said thin semiconductor of a first conductivity type contacts directly with said voltage-sustaining layer.
 7. The semiconductor device according to claim 1, characterized in that: said semiconductor regions contain not only a portion of semiconductor of a first conductivity type but also a portion of semiconductor of a second conductivity type; wherein both the semiconductor of a first conductivity type and the semiconductor of a second conductivity type contact directly with said device feature layer and said contact layer, and said device feature layer is a heavily-doped semiconductor region of a second conductivity type.
 8. The semiconductor device according to claim 1, characterized in that: said semiconductor regions contain not only a portion of semiconductor of a first conductivity type, but also a portion of semiconductor of a second conductivity type; wherein the semiconductor of a first conductivity type contacts directly with both said device feature layer and said contact layer, the semiconductor of a second conductivity type contacts directly with said device feature layer and contacts indirectly with said contact layer through a thin and high permittivity dielectric layer or a thin and low permittivity dielectric layer, and said device feature layer is a heavily-doped semiconductor region of a second conductivity type.
 9. The semiconductor device according to claim 7 or claim 8, characterized in that: there is a high permittivity dielectric region between the semiconductors of said two different conductivity types.
 10. The semiconductor device according to claim 1, characterized in that: said contact layer is a heavily-doped semiconductor of a second conductivity type.
 11. The semiconductor device according to claim 1, characterized in that: said contact layer is a heavily-doped semiconductor of a second conductivity type with a thin semiconductor layer of a first conductivity type thereon, wherein said thin semiconductor layer of a first conductivity type contacts directly with the voltage-sustaining layer.
 12. A semiconductor device according to claim 1, wherein the device feature region is a metal.
 13. A semiconductor device according to claim 1, wherein the device feature region consists of a metal and a heavily doped semiconductor region of the second conductivity type.
 14. A semiconductor device according to claim 1, wherein the contact region is a metal.
 15. A semiconductor device according to claim 1, wherein the contact region consists of a metal and a heavily doped semiconductor region of the first conductivity type. 